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 Ordering number:ENN6422
P-Channel Silicon MOSFET
2SJ400
Ultrahigh-Speed Switching Applications
Features
* Low ON resistance. * Ultrahigh-speed switching. * 4V drive. * Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
Package Dimensions
unit:mm 2093A
[2SJ400]
0.9
10.2 4.5 1.3
11.5
1.6
20.9
1.2
9.4
0.8
11.0
8.8
0.4 1 2 3
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : SMP
unit:mm 2090A
[2SJ400]
0.8 10.2 4.5 1.3
1.5max 8.8
9.9
2.7
3.0
2.55
1.2 2.55
1.35
1 0.8
2
3 0 to 0.3 0.4
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2164 No.6422-1/4
2.7
1.4
2SJ400 Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW10s, duty cycle1% Tc=25C
Conditions
Ratings -30 20 -35 -140 1.65 70 150 -55 to +150
Unit V V A A W W
C C
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=-1mA, VGS=0 IG=100A, VDS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=-35A, VGS=0 -1.0 16 27 20 30 4000 2400 880 30 200 500 270 -1.0 -1.5 30 40 Conditions Ratings min -30 20 -100 10 -2.0 typ max Unit V V A A V S m m pF pF pF ns ns ns ns V
Switching Time Test Circuit
VDD=--30V Vin 0V --10V Vin PW=10s D.C.1% ID=--18A RL=1.67 VOUT
D G
P.G 50 2SJ400
S
No.6422-2/4
2SJ400
--70
ID -- VDS
V GS =-5 .0V
--70
ID -- VGS
VDS=--10V
Tc= --25 C 75 C
--60
.5 --4
V
--60
Drain Current, ID - A
--50
Drain Current, ID - A
--4.0V
25C
--50
--40
--40
--3.5V
--30
--30
--20
--3.0V
--20
--10 0 0 --2 --4 --6 --8
--2.5V
--10 IT00710
--10 0 0 --1 --2 --3 --4 --5 --6 IT00711
Drain-to-Source Voltage, VDS - V
100
Gate-to-Source Voltage, VGS - V
60
yfs -- ID
VDS=--10V Static Drain-to-Source On-State Resistance, RDS (on) - m
RDS(on) -- VGS
Tc=25C ID=--18A
Forward Transfer Admittance, | yfs | - S
7 5 3 2
50
Tc=
C --25
C
40
--75
10 7 5 3 2
25C
30
20
10
1.0 3 5 --1.0 2 3 5
0
Drain Current, ID - A
7 --10
2
3
5
7 --100 IT00712
0
--2
--4
--6
--8
--10
--12
--14 IT00713
Gate-to-Source Voltage, VGS - V
2 10000
60
RDS(on) -- Tc
Ciss, Coss, Crss -- VDS
f=1MHz
Static Drain-to-Source On-State Resistance, RDS (on) - m
50
7 5
Ciss
Ciss, Coss, Crss - pF
40
3 2 1000 7 5 3 2 100 7 5
30
--1 I D=
8
V =--4 V GS A,
Coss
Crss
20
-18 I D=-
A
=--10 , VGS
V
10
0 --80
--40
0
40
80
120
160 IT00714 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7
0
--5
--10
--15
--20
--25
--30 IT00715
Case Temperature, Tc - C
2 1000 7 5 3 2 100 7 5 3 2 10 3 5 7 --1.0 2 3 5
Drain-to-Source Voltage, VDS - V
SW Time -- ID
VDD=--30V VGS=--10V td(off)
ASO
IDP=--140A
Switching Time, SW Time - ns
10
ID=--35A
Drain Current, ID - A
1m
0 s
10 s
s
tf
tr
ms Operation in 0m DC s this area is op era limited by RDS(on). tio n
10
10
td(on)
Tc=25C Single pulse
3 5 7 --1.0 2 3 5 7 --10 2 3 5
Drain Current, ID - A
7 --10
2
3
5
IT00716
Drain-to-Source Voltage, VDS - V
IT00717
No.6422-3/4
2SJ400
2.0
PD -- Ta
Allowable Power Dissipation, PD - W
80 70 60 50 40 30 20 10 0
PD -- Tc
Allowable Power Dissipation, PD - W
1.65 1.6
1.2
N
o
he
at
sin
k
0.8
0.4
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
IT00718
Case Temperature, Tc - C
IT00719
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6422-4/4


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